MT53E512M32D1ZW-046 AIT:BMicron
The 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.
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Micron MT53E512M32D1ZW-046 AIT:B technical specifications, attributes, parameters and parts with similar specifications to Micron MT53E512M32D1ZW-046 AIT:B.
Type
Parameter
Mfr
Micron Technology Inc.
Packaging
Box
Part Status
Active
Memory Type
Volatile
Memory Format
DRAM
Technology
SDRAM - Mobile LPDDR4X
Memory Size
16Gbit
Memory Organization
512M x 32
Memory Interface
Parallel
Clock Frequency
2.133 GHz
Write Cycle Time - Word, Page
18ns
Access Time
3.5 ns
Voltage - Supply
1.06V ~ 1.17V
Operating Temperature
-40°C ~ 95°C (TC)
Grade
Automotive
Qualification
AEC-Q100
Mounting Type
Surface Mount
Package / Case
200-TFBGA
Supplier Device Package
200-TFBGA (10x14.5)
Base Product Number
MT53E512
Download datasheets and manufacturer documentation for Micron MT53E512M32D1ZW-046 AIT:B.
Datasheet:
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Package
PURCHASE
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IMPORTANT NOTICE
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