BSZ075N08NS5Infineon
The BSZ075N08NS5ATMA1 is an 80V N-channel OptiMOS™ 5 power MOSFET from Infineon Technologies, designed for high-efficiency switching and power conversion applications. Featuring ultra-low RDS(on) (~7.5 mΩ), low gate charge (~24–29 nC), high current capability (~40A), and a compact PG-TSDSON-8 package, it is ideal for DC/DC converters, synchronous rectification, telecom and server power supplies, industrial power systems, and high-performance power management designs.
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Infineon BSZ075N08NS5 technical specifications, attributes, parameters and parts with similar specifications to Infineon BSZ075N08NS5.
Type
Parameter
Rohs Code
Yes
Part Life Cycle Code
Active
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
104 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
80 V
Drain Current-Max (ID)
40 A
Drain-source On Resistance-Max
0.0075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
S-PDSO-N3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
160 A
Surface Mount
YES
Terminal Finish
Tin (Sn)
Terminal Form
NO LEAD
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Manufacturer:
Infineon
Product Category:
MOSFETs
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSDSON-8
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
80 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
8.5 mOhms
Vgs - Gate-Source Voltage:
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:
3 V
Qg - Gate Charge:
24 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
69 W
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
MouseReel
Brand:
Infineon Technologies
Configuration:
Single
Fall Time:
4 ns
Forward Transconductance - Min:
21 S
Product Type:
MOSFETs
Rise Time:
4 ns
Series:
OptiMOS 5
Subcategory:
Transistors
Transistor Type:
1 N-Channel
Typical Turn-Off Delay Time:
19 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
BSZ075N08NS5 SP001132454
Unit Weight:
0.001367 oz
Download datasheets and manufacturer documentation for Infineon BSZ075N08NS5.
Datasheets:
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Package
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